Reaction mechanism for the ammonolysis of β-gallium oxide to gallium nitride

被引：4

作者：

Jung, Woo-Sik ^{[1
]}

机构：

[1] Yeungnam Univ, Coll Engn, Sch Chem Engn, Kyongsan 712749, South Korea

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2013年 / 121卷 / 1413期

关键词：

Gallium oxide; Gallium nitride; Ammonolysis; Reaction mechanism; MOLECULAR-BEAM EPITAXY; REDUCTION-NITRIDATION; GROWTH; GA2O3; GAN; HYDROGEN; AMMONIA; POWDERS; FLOW; CHEMISORPTION;

D O I：

10.2109/jcersj2.121.460

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The reaction mechanism for the ammonolysis of beta-gallium oxide (beta-Ga2O3) to gallium nitride (GaN) was elucidated by observing the morphology of microsized beta-Ga2O3 single crystals with a distinct shape under a flow of ammonia (NH3) and hydrogen (H-2) at elevated temperatures. The morphology of the microsized beta-Ga2O3 single crystals grown on the c-plane sapphire by the thermal annealing of gallium sulfide, was not retained after calcination under a flow of NH3 and H-2. These microstructural observations strongly support that the ammonolysis of beta-Ga2O3 to GaN proceeds through gaseous Ga2O, and that the rate of the reduction of beta-Ga2O3 to Ga2O is slower than that of the nitridation of Ga2O to GaN. (C) 2013 The Ceramic Society of Japan. All rights reserved.

引用

页码：460 / 463

页数：4

共 24 条

[1] Growth and applications of Group III nitrides [J].

Ambacher, O .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) :2653-2710

[2] Synthesis routes and characterization of high-purity, single-phase gallium nitride powders [J].

Balkas, CM ;

Davis, RF .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (09) :2309-2312

[3] TEM investigations of GaN layers grown on silicon and sintered GaN nano-ceramic substrates [J].

Borysiuk, J. ;

Caban, P. ;

Strupinski, W. ;

Gierlotka, S. ;

Stelmakh, S. ;

Janik, J. F. .

CRYSTAL RESEARCH AND TECHNOLOGY, 2007, 42 (12) :1291-1296

[4] An in situ XAS investigation of the kinetics of the ammonolysis of Ga2O3 and the oxidation of GaN [J].

Brendt, J. ;

Samuelis, D. ;

Weirich, T. E. ;

Martin, M. .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2009, 11 (17) :3127-3137

[5] Thermal vaporization and deposition of gallium oxide in hydrogen [J].

Butt, DP ;

Park, Y ;

Taylor, TN .

JOURNAL OF NUCLEAR MATERIALS, 1999, 264 (1-2) :71-77

[6] Hydrogen chemisorption on gallium oxide polymorphs [J].

Collins, SE ;

Baltanás, MA ;

Bonivardi, AL .

LANGMUIR, 2005, 21 (03) :962-970

[7] Probing the Structural/Electronic Diversity and Thermal Stability of Various Nanocrystalline Powders of Gallium Nitride GaN [J].

Drygas, Mariusz ;

Olejniczak, Zbigniew ;

Grzanka, Ewa ;

Bucko, Miroslaw M. ;

Paine, Robert T. ;

Janik, Jerzy F. .

CHEMISTRY OF MATERIALS, 2008, 20 (21) :6816-6828

[8] Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3 [J].

Imade, Mamoru ;

Kishimoto, Hiroki ;

Kawamura, Fumio ;

Yoshimura, Masashi ;

Kitaoka, Yasuo ;

Sasaki, Takatomo ;

Mori, Yusuke .

JOURNAL OF CRYSTAL GROWTH, 2010, 312 (05) :676-679

[9] Hydrogen on polycrystalline β-Ga2O3:: Surface chemisorption, defect formation, and reactivity [J].

Jochum, Wilfrid ;

Penner, Simon ;

Foettinger, Karin ;

Kramer, Reinhard ;

Rupprechter, Guenther ;

Kloetzer, Bernhard .

JOURNAL OF CATALYSIS, 2008, 256 (02) :268-277

[10] Reaction mechanism of the nitridation of α-gallium oxide to gallium nitride under a flow of ammonia [J].

Jung, Woo-Sik .

MATERIALS LETTERS, 2006, 60 (24) :2954-2957

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