Proper hot filament CVD conditions for fabrication of Ti-boron doped diamond electrodes

被引：21

作者：

Chen, XM ^{[1
]}

Chen, GH ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Chem Engn, Kowloon, Hong Kong, Peoples R China

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2004年 / 151卷 / 04期

关键词：

D O I：

10.1149/1.1651529

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Hot filament chemical vapor deposition (CVD) of boron-doped diamond films on Ti substrates was investigated under different conditions with CH4 and H-2 as precursors. Accelerated life tests, and physiochemical as well as electrochemical characterization, were conducted to assess the qualities of the electrodes obtained. The proper conditions were found to be substrate temperature 850degreesC, filament temperature 2120-2150degreesC, CH4 concentration 0.8%, filament- substrate distance 8 mm, deposition time 15 h, and pressure 30 mbar, under which the films with well-defined diamond features could be successfully deposited on Ti substrates. In addition, the thereby-prepared electrodes demonstrated the longest service life and good voltammetric behavior. (C) 2004 The Electrochemical Society.

引用

页码：B214 / B219

页数：6

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