Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode

被引：38

作者：

Collins, CJ ^{[1
]}

Li, T

Beck, AL

Dupuis, RD

Campbell, JC

Carrano, JC

Schurman, MJ

Ferguson, IA

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78712 USA

[2] US Mil Acad, Dept Elect Engn & Comp Sci, Photon Res Ctr, West Point, NY 10996 USA

[3] EMCORE Corp, Somerset, NJ 08873 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 14期

关键词：

D O I：

10.1063/1.124942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the improved device performance of GaN-based ultraviolet heterojunction photodiodes using a semi-transparent p-contact device structure. At a reverse bias of 10 V, these photodiodes exhibit a low dark current density of 0.3 nA/cm(2). The external quantum efficiency is 38% at the band edge, with only a slight decrease at the shorter wavelengths. The forward current is > 10 mA at V-f=5 V. Fitting of the forward current-voltage data to the diode equation yields a very low series resistance (R-s=62 Omega), which results in a very fast decay of the time response. The improved performance afforded by the thin, semi-transparent, p-contact layer is due to an increase in the uniformity of the lateral field distribution. (C) 1999 American Institute of Physics. [S0003-6951(99)01340-6].

引用

页码：2138 / 2140

页数：3

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