Electrooptic modulation of multisilicon-on-insulator photonic wires

被引：21

作者：

Barrios, Carlos Angulo ^{[1
]}

机构：

[1] Univ Politecn Valencia, Valencia 46022, Spain

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2006年 / 24卷 / 05期

关键词：

device modeling; integrated optics; plasma dispersion effect; silicon optoelectronics;

D O I：

10.1109/JLT.2006.872277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes and analyzes electrically modulated submicrometer-size high-index-contrast waveguides (photonic wires) based on a multisilicon-on-insulator (MSOI) platform. Metal-oxide-semiconductor junctions are used to control the effective refractive index of the waveguides. The electrooptic structures are electrically and optically modeled. The performances of the studied configurations are analyzed and compared in terms of phase modulation efficiency, optical losses, and operation speed, and the feasibility of their fabrication is discussed. Calculations indicate that the proposed schemes can be used to achieve highly efficient phase shifters (V pi L pi < 1 V-cm) based on photonic wires on MSOI, with data transmission rates ranging from 3 to 10 Gb/s.

引用

页码：2146 / 2155

页数：10

共 23 条

[1]

[Anonymous], 1987, PROC SPIE

[2] Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices [J].