Characterization of the well-aligned ZnO nanorod structure on a pulsed laser deposited AlZnO seed layer

被引：11

作者：

Lin, Chia-Feng ^{[1
]}

Lin, Ming-Shiou ^{[1
]}

Chen, Chi-Chi ^{[1
]}

Tsai, Peng-Han ^{[1
]}

Wang, Fang-Hsing ^{[2
,3
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 402, Taiwan

[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan

[3] Natl Chung Hsing Univ, Grad Inst Optoelect Engn, Taichung 402, Taiwan

来源：

SURFACE & COATINGS TECHNOLOGY | 2013年 / 231卷

关键词：

ZnO nanorod; Pulsed laser deposition; AZO seed layer; LIGHT-EMITTING-DIODES; NANOWIRES; TEMPERATURE; GROWTH;

D O I：

10.1016/j.surfcoat.2012.07.020

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO nanorod structures on InGaN light-emitting diode (LED) structures were grown by inserting the aluminum zinc oxide (AZO) seed layers through a sputtering and a pulsed laser deposition (PLD) processes. The well-aligned ZnO nanorods on the PLD-AZO seed layer had a higher crystalline quality and a preferred orientation along (002) plane because the X-ray intensity of (002) peak was stronger than that of (100) and (101) peaks. The inter-planar spacing in a high resolution transmission electron microscopy image is approximately 0.26 nm corresponding to (002) plane of the ZnO nanorod structure. The strong photoluminescence intensity of the ZnO nanorods on the PLD-AZO seed layer was observed at 378 nm. The light output power had a 54% enhancement for the InGaN LEDs with the ZnO nanorod structures on the PLD-AZO seed layer compared with a conventional LED structure. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：161 / 165

页数：5

共 32 条

[11] Preparation and properties of ZnO and devices [J].

Izyumskaya, N. ;

Avrutin, V. ;

Oezguer, Ue. ;

Alivov, Y. I. ;

Morkoc, H. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (05) :1439-1450

[12] Synthesis of ZnO nanorods on GaN epitaxial layer and Si (100) substrate using a simple hydrothermal process [J].

Jang, Jae-Min ;

Kim, Jin-Yeol ;

Jung, Woo-Gwang .

THIN SOLID FILMS, 2008, 516 (23) :8524-8529

[13] ZnO nanowires with high aspect ratios grown by metalorganic chemical vapor deposition using gold nanoparticles [J].

Kim, SW ;

Fujita, S ;

Fujita, S .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[14] InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition [J].

Ko, T. S. ;

Wang, T. C. ;

Gao, R. C. ;

Lee, Y. J. ;

Lu, T. C. ;

Kuo, H. C. ;

Wang, S. C. ;

Chen, H. G. .

APPLIED PHYSICS LETTERS, 2007, 90 (01)

[15] Recent advances in ZnO materials and devices [J].

Look, DC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :383-387

[16] Improved p-type conductivity and acceptor states in N-doped ZnO thin films [J].

Lu, Jianguo ;

Liang, Qunian ;

Zhang, Yinzhu ;

Ye, Zhizhen ;

Fujita, Shizuo .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (10) :3177-3181

[17] Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution [J].

Ohyama, M ;

Kozuka, H ;

Yoko, T .

THIN SOLID FILMS, 1997, 306 (01) :78-85

[18] Improved efficiency of the chemical bath deposition method during growth of ZnO thin films [J].

Ortega-López, M ;

Avila-García, A ;

Albor-Aguilera, ML ;

Sánchez-Resendiz, VM .

MATERIALS RESEARCH BULLETIN, 2003, 38 (07) :1241-1248

[19] A comprehensive review of ZnO materials and devices -: art. no. 041301 [J].

Ozgür, U ;

Alivov, YI ;

Liu, C ;

Teke, A ;

Reshchikov, MA ;

Dogan, S ;

Avrutin, V ;

Cho, SJ ;

Morkoç, H .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (04) :1-103

[20] Conducting and transparent single-wall carbon nanotube electrodes for polymer-fullerene solar cells [J].

Pasquier, AD ;

Unalan, HE ;

Kanwal, A ;

Miller, S ;

Chhowalla, M .

APPLIED PHYSICS LETTERS, 2005, 87 (20) :1-3

← 1 2 3 4 →