Characterization of the well-aligned ZnO nanorod structure on a pulsed laser deposited AlZnO seed layer

被引：11

作者：

Lin, Chia-Feng ^{[1
]}

Lin, Ming-Shiou ^{[1
]}

Chen, Chi-Chi ^{[1
]}

Tsai, Peng-Han ^{[1
]}

Wang, Fang-Hsing ^{[2
,3
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 402, Taiwan

[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan

[3] Natl Chung Hsing Univ, Grad Inst Optoelect Engn, Taichung 402, Taiwan

来源：

SURFACE & COATINGS TECHNOLOGY | 2013年 / 231卷

关键词：

ZnO nanorod; Pulsed laser deposition; AZO seed layer; LIGHT-EMITTING-DIODES; NANOWIRES; TEMPERATURE; GROWTH;

D O I：

10.1016/j.surfcoat.2012.07.020

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO nanorod structures on InGaN light-emitting diode (LED) structures were grown by inserting the aluminum zinc oxide (AZO) seed layers through a sputtering and a pulsed laser deposition (PLD) processes. The well-aligned ZnO nanorods on the PLD-AZO seed layer had a higher crystalline quality and a preferred orientation along (002) plane because the X-ray intensity of (002) peak was stronger than that of (100) and (101) peaks. The inter-planar spacing in a high resolution transmission electron microscopy image is approximately 0.26 nm corresponding to (002) plane of the ZnO nanorod structure. The strong photoluminescence intensity of the ZnO nanorods on the PLD-AZO seed layer was observed at 378 nm. The light output power had a 54% enhancement for the InGaN LEDs with the ZnO nanorod structures on the PLD-AZO seed layer compared with a conventional LED structure. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：161 / 165

页数：5

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