Mode-locked VECSEL emitting 5 ps pulses at 675 nm

被引：30
作者：
Ranta, Sanna [1 ]
Harkonen, Antti [1 ]
Leinonen, Tomi [1 ]
Orsila, Lasse [1 ]
Lyytikainen, Jari [1 ]
Steinmeyer, Gunter [1 ,2 ]
Guina, Mircea [1 ]
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland
[2] Max Born Inst Nonlinear Opt & Short Pulse Spect, D-12489 Berlin, Germany
来源：
OPTICS LETTERS | 2013年 / 38卷 / 13期
基金：
芬兰科学院;
关键词：
SATURABLE ABSORBER MIRRORS; SEMICONDUCTOR DISK LASER; HIGH-POWER; MU-M; GENERATION; FEMTOSECOND; WAVELENGTH; LOCKING; GHZ;
D O I：
10.1364/OL.38.002289
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A picosecond GaInP/AlGaInP/GaAs vertical external-cavity surface-emitting laser (VECSEL) at 675 nm is reported. The laser is mode-locked with a GaInP/AlGaInP/GaAs saturable absorber mirror and emitted similar to 5.1 ps pulses at a 973 MHz repetition rate and an average power of 45 mW. To our knowledge, this is the first demonstration of a passively mode-locked VECSEL emitting fundamental laser radiation at the visible part of the spectrum. (C) 2013 Optical Society of America
引用
收藏
页码：2289 / 2291
页数：3
相关论文
共 21 条
  • [1] Modelocked GaSb disk laser producing 384 fs pulses at 2 μm wavelength
    Harkonen, A.
    Grebing, C.
    Paajaste, J.
    Koskinen, R.
    Alanko, J. -P.
    Suomalainen, S.
    Steinmeyer, G.
    Guina, M.
    [J]. ELECTRONICS LETTERS, 2011, 47 (07) : 454 - 455
  • [2] High power CW red VECSEL with linearly polarized TEM00 output beam
    Hastie, JE
    Calvez, S
    Dawson, MD
    Leinonen, T
    Laakso, A
    Lyytikäinen, J
    Pessa, M
    [J]. OPTICS EXPRESS, 2005, 13 (01): : 77 - 81
  • [3] Holms M. A., 1999, CLEO, P153
  • [4] Picosecond pulse generation with 1.5 μm passively modelocked surface-emitting semiconductor laser
    Hoogland, S
    Garnache, A
    Sagnes, I
    Paldus, B
    Weingarten, KJ
    Grange, R
    Haiml, M
    Paschotta, R
    Keller, U
    Tropper, AC
    [J]. ELECTRONICS LETTERS, 2003, 39 (11) : 846 - 847
  • [5] Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers
    Keller, U
    Weingarten, KJ
    Kartner, FX
    Kopf, D
    Braun, B
    Jung, ID
    Fluck, R
    Honninger, C
    Matuschek, N
    derAu, JA
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (03) : 435 - 453
  • [6] Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser
    Klopp, P.
    Griebner, U.
    Zorn, M.
    Weyers, M.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (07)
  • [7] High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams
    Kuznetsov, M
    Hakimi, F
    Sprague, R
    Mooradian, A
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (08) : 1063 - 1065
  • [8] Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking
    Lederer, MJ
    Kolev, V
    Luther-Davies, B
    Tan, HH
    Jagadish, C
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (16) : 2455 - 2464
  • [9] Semiconductor wafer bonding via liquid capillarity
    Liau, ZL
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (05) : 651 - 653
  • [10] Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber
    Lindberg, H
    Sadeghi, M
    Westlund, M
    Wang, SM
    Larsson, A
    Strassner, M
    Marcinkevicius, S
    [J]. OPTICS LETTERS, 2005, 30 (20) : 2793 - 2795
123