Controlling oxygen distribution of an MgAl2O4 barrier for magnetic tunnel junctions by two-step process

被引：5

作者：

Ichikawa, Shinto ^{[1
]}

Cheng, P-H ^{[2
,3
]}

Sukegawa, Hiroaki ^{[2
]}

Ohkubo, Tadakatsu ^{[2
]}

Hono, Kazuhiro ^{[2
,3
]}

Mitani, Seiji ^{[2
,3
]}

Nakada, Katsuyuki ^{[1
]}

机构：

[1] TDK Corp, Adv Prod Dev Ctr, Technol & Intellectual Property HQ, 2-15-7 Higashi Ohwada, Ichikawa 2728558, Japan

[2] Natl Inst Mat Sci, Res Ctr Magnet & Spintron Mat, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

[3] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan

来源：

APPLIED PHYSICS LETTERS | 2020年 / 117卷 / 12期

关键词：

MAGNETORESISTANCE;

D O I：

10.1063/5.0015474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An MgAl2O4 barrier with an ordered spinel structure for magnetic tunnel junctions (MTJs) was prepared via a two-step process by repeating Mg-Al alloy deposition and post-oxidation to tune its oxidation state. The obtained Fe/MgAl2O4/Fe(001) epitaxial MTJs showed a large tunnel magnetoresistance (TMR) ratio (>150%) in a wide resistance x area (RA) range; this behavior was in contrast with that of MTJs prepared through a conventional one-step process, which exhibited a large TMR ratio only in a narrow RA range. The bias voltage at which the TMR is halved from the zero-bias value increased up to 1.20 and 1.47V for the positive and negative bias polarities, respectively, when optimizing the two-step process. The nanostructure analysis revealed an improved oxygen distribution on the atomic scale in the MgAl2O4 barrier with the two-step process, providing a coherent barrier suitable for various practical applications.

引用

页数：5

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