Spin-Pump-Induced Spin Transport in p-Type Si at Room Temperature

被引：163

作者：

Shikoh, Eiji ^{[1
]}

Ando, Kazuya ^{[2
]}

Kubo, Kazuki ^{[1
]}

Saitoh, Eiji ^{[2
,3
,4
]}

Shinjo, Teruya ^{[1
]}

Shiraishi, Masashi ^{[1
,5
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

[4] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan

[5] Japan Sci & Technol Agcy, PRESTO, Tokyo 1020075, Japan

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 12期

关键词：

SILICON; SPINTRONICS; CONTACTS; FIELD;

D O I：

10.1103/PhysRevLett.110.127201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature. DOI: 10.1103/PhysRevLett.110.127201

引用

页数：5

共 50 条

[41] A vertical transport geometry for electrical spin injection and extraction in Si
Husain, M. K.
Li, X. V.
de Groot, C. H.
SOLID STATE COMMUNICATIONS, 2009, 149 (37-38) : 1565 - 1568
[42] Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
Yamada, Michihiro
Tsukahara, Makoto
Fujita, Yuichi
Naito, Takahiro
Yamada, Shinya
Sawano, Kentarou
Hamaya, Kohei
APPLIED PHYSICS EXPRESS, 2017, 10 (09)
[43] Long-distance transport of magnon spin information in a magnetic insulator at room temperature
Cornelissen, L. J.
Liu, J.
Duine, R. A.
Ben Youssef, J.
van Wees, B. J.
NATURE PHYSICS, 2015, 11 (12) : 1022 - +
[44] Low Temperature Electrical Spin Injection from Highly Spin Polarized Co2CrAl Heusler Alloy into p-Si
Kar, Uddipta
Panda, J.
Nath, T. K.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 18 (06) : 4135 - 4141
[45] Induced spin-polarization of EuS at room temperature in Ni/EuS multilayers
Poulopoulos, P.
Goschew, A.
Kapaklis, V.
Wolff, M.
Delimitis, A.
Wilhelm, F.
Rogalev, A.
Pappas, S. D.
Straub, A.
Fumagalli, P.
APPLIED PHYSICS LETTERS, 2014, 104 (11)
[46] n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature
Shaban, Mahmoud
Izumi, Shota
Nomoto, Keita
Yoshitake, Tsuyoshi
APPLIED PHYSICS LETTERS, 2009, 95 (16)
[47] Ultralong 100 ns spin relaxation time in graphite at room temperature
Markus, B. G.
Gmitra, M.
Dora, B.
Csosz, G.
Feher, T.
Szirmai, P.
Nafradi, B.
Zolyomi, V.
Forro, L.
Fabian, J.
Simon, F.
NATURE COMMUNICATIONS, 2023, 14 (01)
[48] Thick p-type Mg2Si film on Si: Growth, structure and transport properties
Chernev, Igor M.
Subbotin, Evgenii Yu.
Kozlov, Aleksei G.
Gerasimenko, Andrey V.
Ustinov, Alexander Yu.
Galkin, Nikolay G.
Poliakov, Maksim V.
Volkova, Lidiya S.
Dudin, Alexander A.
Gouralnik, Alexander S.
JOURNAL OF ALLOYS AND COMPOUNDS, 2023, 964
[49] Room-temperature spin injection and spin loss across a GaNAs/GaAs interface
Puttisong, Y.
Wang, X. J.
Buyanova, I. A.
Tu, C. W.
Geelhaar, L.
Riechert, H.
Chen, W. M.
APPLIED PHYSICS LETTERS, 2011, 98 (01)
[50] Room Temperature Spin Relaxation in Quantum Dot Based Spin-Optoelectronic Devices
Hoepfner, Henning
Li, Mingyuan
Ludwig, Arne
Ludwig, Astrid
Stromberg, Frank
Wende, Heiko
Keune, Werner
Reuter, Dirk
Wieck, Andreas D.
Gerhardt, Nils C.
Hofmann, Martin R.
ULTRAFAST PHENOMENA AND NANOPHOTONICS XVI, 2012, 8260

← 1 2 3 4 5 →