Spin-Pump-Induced Spin Transport in p-Type Si at Room Temperature

被引：163

作者：

Shikoh, Eiji ^{[1
]}

Ando, Kazuya ^{[2
]}

Kubo, Kazuki ^{[1
]}

Saitoh, Eiji ^{[2
,3
,4
]}

Shinjo, Teruya ^{[1
]}

Shiraishi, Masashi ^{[1
,5
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

[4] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan

[5] Japan Sci & Technol Agcy, PRESTO, Tokyo 1020075, Japan

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 12期

关键词：

SILICON; SPINTRONICS; CONTACTS; FIELD;

D O I：

10.1103/PhysRevLett.110.127201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature. DOI: 10.1103/PhysRevLett.110.127201

引用

页数：5

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