InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and fT of 370 GHz

被引：292

作者：

Yue, Yuanzheng ^{[1
]}

Hu, Zongyang ^{[1
]}

Guo, Jia ^{[1
]}

Sensale-Rodriguez, Berardi ^{[1
]}

Li, Guowang ^{[1
]}

Wang, Ronghua ^{[1
]}

Faria, Faiza ^{[1
]}

Fang, Tian ^{[1
]}

Song, Bo ^{[1
]}

Gao, Xiang ^{[2
]}

Guo, Shiping ^{[2
]}

Kosel, Thomas ^{[1
]}

Snider, Gregory ^{[1
]}

Fay, Patrick ^{[1
]}

Jena, Debdeep ^{[1
]}

Xing, Huili ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] IQE RF LLC, Somerset, NJ 08873 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 07期

关键词：

AlN; cutoff frequency; f(T); GaN; high-electron-mobility transistor (HEMT); InAlN; molecular beam epitaxy (MBE); regrown ohmic contacts; transistor; INALN/GAN HEMTS;

D O I：

10.1109/LED.2012.2196751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency (f(T)) of 370 GHz. The HEMT without back barrier exhibits an extrinsic transconductance (g(m. ext)) of 650 mS/mm and an on/off current ratio of 10(6) owing to the incorporation of dielectric-free passivation and regrown ohmic contacts with a contact resistance of 0.16 Omega . mm. Delay analysis suggests that the high f(T) is a result of low gate-drain parasitics associated with the rectangular gate. Although it appears possible to reach 500-GHz f(T) by further reducing the gate length, it is imperative to investigate alternative structures that offer higher mobility/velocity while keeping the best possible electrostatic control in ultrascaled geometry.

引用

页码：988 / 990

页数：3

共 21 条

[1] Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth [J].

Dasgupta, Sansaptak ;

Nidhi ;

Brown, David F. ;

Wu, Feng ;

Keller, Stacia ;

Speck, James S. ;

Mishra, Umesh K. .

APPLIED PHYSICS LETTERS, 2010, 96 (14)

[2] ON DEFINITION OF CUTOFF FREQUENCY-FT [J].

GUMMEL, HK .

PROCEEDINGS OF THE IEEE, 1969, 57 (12) :2159-&

[3] MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω . mm [J].

Guo, Jia ;

Li, Guowang ;

Faria, Faiza ;

Cao, Yu ;

Wang, Ronghua ;

Verma, Jai ;

Gao, Xiang ;

Guo, Shiping ;

Beam, Edward ;

Ketterson, Andrew ;

Schuette, Michael ;

Saunier, Paul ;

Wistey, Mark ;

Jena, Debdeep ;

Xing, Huili .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) :525-527

[4] Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy [J].

Guo, Jia ;

Cao, Yu ;

Lian, Chuanxin ;

Zimmermann, Tom ;

Li, Guowang ;

Verma, Jai ;

Gao, Xiang ;

Guo, Shiping ;

Saunier, Paul ;

Wistey, Mark ;

Jena, Debdeep ;

Xing, Huili .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (07) :1617-1619

[5]

Kim D.H., 2011, P INT EL DEV M IEDM, DOI [10.1109/IEDM.2011.6131548, DOI 10.1109/IEDM.2011.6131548]

[6] Power electronics on InAlN/(In)GaN:: Prospect for a record performance [J].

Kuzmík, J .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (11) :510-512

[7] Delay time analysis of submicron InP-based HEMT's [J].

Kwon, Y ;

Pavlidis, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (02) :228-237

[8] 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier [J].

Lee, Dong Seup ;

Gao, Xiang ;

Guo, Shiping ;

Kopp, David ;

Fay, Patrick ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) :1525-1527

[9] 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment [J].

Lee, Dong Seup ;

Chung, Jinwook W. ;

Wang, Han ;

Gao, Xiang ;

Guo, Shiping ;

Fay, Patrick ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (06) :755-757

[10] Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts [J].

Li, Guowang ;

Wang, Ronghua ;

Guo, Jia ;

Verma, Jai ;

Hu, Zongyang ;

Yue, Yuanzheng ;

Faria, Faiza ;

Cao, Yu ;

Kelly, Michelle ;

Kosel, Thomas ;

Xing, Huili ;

Jena, Debdeep .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (05) :661-663

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