Valence band structures and optical transitions of Ga1-xInxNyAs1-y/GaAs compressively strained quantum wells

被引：0

作者：

Fan, WJ ^{[1
]}

Yoon, SF ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 06期

关键词：

band structure; optical transition; strain; quantum well;

D O I：

10.1016/S1369-8001(02)00018-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electronic structures of the Ga1-xInxNyAs1-y/GaAs compressively strained quantum wells (QW) are investigated using 6 X 6 k (.) p Hamiltonian including the heavy hole, light hole and spin-orbit splitting band. The curves of dependence of transition energy on well width and N mole fraction are obtained. The valence subband energy dispersion curves, density of state and TE and TM squared optical transition matrix elements of three possible QW structures for emitting 1.3 mum wavelength are given. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：563 / 566

页数：4

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