In-situ growth of PbTiO3 thin films on GaAs substrates

被引：0
|
作者：
Jaber, B [1 ]
Tronc, P [1 ]
Remiens, D [1 ]
Thierry, B [1 ]
Chaouch, H [1 ]
机构：
[1] FAC SCI FES DHAR ELMEHRAZ,FES ATLAS,MOROCCO
来源：
FERROELECTRICS | 1997年 / 201卷 / 1-4期
关键词：
PIEZOELECTRIC PROPERTIES; TITANATE;
D O I：
10.1080/00150199708228378
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
PbTiO3 (PT) based ferroelectric capacitors have been produced in-situ on GaAs substrates by r.f. magnetron sputtering. Stoichiometric films have been obtained in the temperature range 440 degrees C - 460 degrees C without any substrate degradations. X-Ray diffraction results show that pure perovskite structure is obtained in-situ without post-annealing treatment. The PT film is polycrystalline without any preferred orientation. Electrical properties of the films have been evaluated, in particular the ferroelectric properties have been tested.
引用
收藏
页码：277 / 284
页数：8
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