Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor

被引：2

作者：

Bourguiga, R ^{[1
]}

Sik, H

Scavennec, A

机构：

[1] Fac Sci Bizerte, Zarzouna Bizerte 7021, Tunisia

[2] France Telecom, Ctr Natl Etud Telecommun, Lab Bagneux, F-92225 Bagneux, France

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 1999年 / 6卷 / 03期

关键词：

D O I：

10.1051/epjap:1999187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparative study on the emitter-base recombination current in different GaAlAs/GaInP/GaAs HBT structures including uniform base HBTs, and composition graded base HBTs, has been carried out. We have demonstrated that a graded base is not sufficient to prevent recombination on the base surface and that a thin GaInP ledge on the base surface remains necessary to retain a high enough current gain for small emitter high-frequency devices.

引用

页码：299 / 301

页数：3

共 5 条

[1] Investigation on base surface recombination in self passivated GaAlAs/GaInP/GaAs heterojunction bipolar transistor [J].