Impact of Al-Ion Implantation on the Formation of Deep Defects in n-Type 4H-SiC

被引：0

作者：

Weisse, Julietta ^{[1
]}

Csato, Constantin ^{[2
]}

Hauck, Martin ^{[3
]}

Erlekampf, Jurgen ^{[4
]}

Akhmadaliev, Shavkat ^{[5
]}

Rommel, Mathias ^{[4
]}

Mitlehner, Heinz ^{[4
]}

Rueb, Michael ^{[6
]}

Krieger, Michael ^{[3
]}

Bauer, Anton ^{[4
]}

Haeublein, Volker ^{[4
]}

Erlbacher, Tobias ^{[4
]}

Frey, Lothar ^{[4
]}

机构：

[1] Friedrich Alexander Univ Erlangen Nuremberg, Chair Electron Devices, Erlangen, Germany

[2] Mi2 Factory GmbH, Jena, Germany

[3] Friedrich Alexander Univ Erlangen Nuremberg, Chair Appl Phys, Erlangen, Germany

[4] Fraunhofer IISB, Erlangen, Germany

[5] Helmholtz Zentrum Dresden Rossendorf, Dresden, Germany

[6] Mi2 Factory GmbH, Ernst Abbe Hsch Jena, Jena, Germany

来源：

2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018) | 2018年

关键词：

aluminum; high energy ion implantation; energy filter implantation; EFII; defects; compensation; Deep Level Transient Spectroscopy; DLTS; Hall Effect; 4H-SiC;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, deep defects in an aluminum-implanted 4H-SiC n-type epitaxy are discussed in dependence on following influencing factors: concentration of implanted aluminum, implantation energy, implantation at 500 degrees C and at room temperature, as well as ascending or descending order of implantation energies during ion implantation using Gaussian profiles. The compensation ratio, which reaches values up to 90% of the implanted aluminum concentration, is determined by Hall Effect measurements. Compensating defect centers (Z(1/2)-, ONx-defects) are detected by Deep Level Transient Spectroscopy after high energy ion implantation using an energy filter, followed by an annealing and an oxidation process.

引用

页码：66 / 69

页数：4

共 50 条

[31] Deep level defects related to carbon displacements in n- and p-type 4H-SiC
Storasta, L.
Kamata, I.
Nakamura, T.
Tsuchida, H.
SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 489 - +
[32] Defects in High Energy Ion Irradiated 4H-SiC
Izzo, G.
Litrico, G.
Severino, A.
Foti, G.
La Via, F.
Calcagno, L.
SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 397 - 400
[33] Defects induced by high energy helium implantation in 4H-SiC
Beaufort, MF
Oliviero, E
David, ML
Nomgaudyte, J
Pranevicius, L
Declémy, A
Barbot, JF
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 : 218 - 222
[34] Reducing stacking faults in highly doped n-type 4H-SiC crystal
Kojima, K.
Kato, T.
Ito, S.
Kojima, J.
Hirose, F.
Kito, Y.
Yamauchi, S.
Nishikawa, K.
Adachi, A.
SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 8 - +
[35] Minority Carrier Trap in n-Type 4H-SiC Schottky Barrier Diodes
Capan, Ivana
Yamazaki, Yuichi
Oki, Yuya
Brodar, Tomislav
Makino, Takahiro
Ohshima, Takeshi
CRYSTALS, 2019, 9 (07):
[36] Surface recombination velocities for n-type 4H-SiC treated by various processes
Mori, Yuto
Kato, Masashi
Ichimura, Masaya
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (33)
[37] Improved n-Type 4H-SiC Epitaxial Radiation Detectors by Edge Termination
Nguyen, Khai V.
Mannan, Mohammad A.
Mandal, Krishna C.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) : 3199 - 3206
[38] Structural defects formed in Al-implanted and annealed 4H-SiC
Jones, KA
Zheleva, TS
Kulkarni, VN
Ervin, MH
Derenge, MA
Vispute, RD
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 889 - 892
[39] Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
Ichikawa, Shuhei
Kawahara, Koutarou
Suda, Jun
Kimoto, Tsunenobu
APPLIED PHYSICS EXPRESS, 2012, 5 (10)
[40] Low temperature reaction of point defects in ion irradiated 4H-SiC
Litrico, G.
Izzo, G.
Calcagno, L.
La Via, F.
Foti, G.
DIAMOND AND RELATED MATERIALS, 2009, 18 (01) : 39 - 42

← 1 2 3 4 5 →