Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

被引：20
|
作者：
Yau, H. M. [1 ]
Yan, Z. B. [2 ]
Chan, N. Y. [1 ]
Au, K. [1 ]
Wong, C. M. [1 ]
Leung, C. W. [1 ]
Zhang, F. Y. [3 ,4 ]
Gao, X. S. [3 ,4 ]
Dai, J. Y. [1 ]
机构：
[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[2] Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Jiangsu, Peoples R China
[3] S China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China
[4] S China Normal Univ, Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China
来源：
SCIENTIFIC REPORTS | 2015年 / 5卷
关键词：
ROOM-TEMPERATURE; SPIN POLARIZATION; MAGNETORESISTANCE; ELECTRORESISTANCE; FERROELECTRICITY; THICKNESS; SINGLE;
D O I：
10.1038/srep12826
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.
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页数：8
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