Microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 ceramics doped with Nb2O5, MnO2 or V2O3

被引：10
作者：
Jinga, S. I. [1 ]
Stoleriu, Stefania [1 ]
Busuioc, C. [1 ,2 ]
机构：
[1] Univ Politehn Bucuresti, RO-011061 Bucharest, Romania
[2] Natl Inst Mat Phys, RO-077125 Magurele, Romania
来源：
MATERIALS RESEARCH BULLETIN | 2012年 / 47卷 / 11期
关键词：
Ceramics; Electronic materials; Dielectric properties; Microstructure; TEMPERATURE; DOPANTS;
D O I：
10.1016/j.materresbull.2012.06.035
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Dielectric materials with a high permittivity (epsilon(r)), a high quality factor (Q) and a low temperature coefficient of the resonant frequency (tau(f)) have become very important for the miniaturization of microwave devices, such as filters or antennas. In this work, Ba(Zn1/3Ta2/3)O-3 (BZT) ceramics doped with Nb2O5, MnO2 or V2O3 were obtained by the conventional solid-state reaction method. We report on the compositional, structural and morphological characterization of BZT resonators, as well as on the influence of the dopant (type and quantity) and sintering temperature on their dielectric properties. The best microwave dielectric properties (epsilon(r) similar to 28.4 and Q x f similar to 236 THz) were achieved in the case of 1% V2O3 doping and 1600 C sintering temperature. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：3713 / 3718
页数：6
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