Electro-optic S-parameter and electric-field profiling measurement of microwave integrated circuits

An S-parameter measurement system based on electro-optic sampling for the on-wafer testing of microwave integrated circuits is presented. Conventional network-analyser measurements on passive circuits up to 20GHz are used to establish a calibration and measurement procedure to allow S-21 measurement on further circuits with 0.5 dB uncertainty. Extension of these rules to the noninvasive testing of active microwave circuits, coupling waveguides and digital circuits is demonstrated with a spatial resolution of 8 mu m and submillivolt sensitivity.