A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films

被引:49
作者
Wu, Jiagang [1 ]
Qiao, Sha [1 ]
Wang, John [2 ]
Xiao, Dingquan [1 ]
Zhu, Jianguo [1 ]
机构
[1] Sichuan Univ, Dept Mat Sci, Chengu 610064, Peoples R China
[2] Natl Univ Singapore, Fac Engn, Dept Mat Sci & Engn, Singapore 117574, Singapore
基金
美国国家科学基金会;
关键词
EARTH-SUBSTITUTED BIFEO3; FERROELECTRIC PROPERTIES;
D O I
10.1063/1.4790380
中图分类号
O59 [应用物理学];
学科分类号
摘要
A giant remanent polarization of BiFeO3 thin films is obtained by introducing Zn and Mn, and Bi(Fe0.93Mn0.05Zn0.02)O-3 (BFMZO) thin films were prepared on SrRuO3-buffered silicon substrates by the radio-frequency sputtering. An (111) orientation is induced in such a film because of the introduction of an SrRuO3 buffer layer. An enhanced ferroelectric behavior of 2P(r) similar to 235 mu C/cm(2) and 2E(c) similar to 612 kV/cm is observed in BFMZO thin films, together with a fatigue-free behavior. As a result, the introduction of Zn and Mn is a good way to improve the electrical behavior of BiFeO3 thin films. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790380]
引用
收藏
页数:3
相关论文
共 24 条
[1]   Physics and Applications of Bismuth Ferrite [J].
Catalan, Gustau ;
Scott, James F. .
ADVANCED MATERIALS, 2009, 21 (24) :2463-2485
[2]   Defect Control for Polarization Switching in BiFeO3 Single Crystals [J].
Chishima, Yuji ;
Noguchi, Yuji ;
Kitanaka, Yuuki ;
Miyayama, Masaru .
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2010, 57 (10) :2233-2236
[3]   Multiferroic and magnetoelectric materials [J].
Eerenstein, W. ;
Mathur, N. D. ;
Scott, J. F. .
NATURE, 2006, 442 (7104) :759-765
[4]  
FEDULOV SA, 1964, SOV PHYS-SOL STATE, V6, P375
[5]   Combinatorial discovery of a lead-free morphotropic phase boundary in a thin-film piezoelectric perovskite [J].
Fujino, S. ;
Murakami, M. ;
Anbusathaiah, V. ;
Lim, S. -H. ;
Nagarajan, V. ;
Fennie, C. J. ;
Wuttig, M. ;
Salamanca-Riba, L. ;
Takeuchi, I. .
APPLIED PHYSICS LETTERS, 2008, 92 (20)
[6]   Universal Behavior and Electric-Field-Induced Structural Transition in Rare-Earth-Substituted BiFeO3 [J].
Kan, Daisuke ;
Palova, Lucia ;
Anbusathaiah, Varatharajan ;
Cheng, Ching Jung ;
Fujino, Shigehiro ;
Nagarajan, Valanoor ;
Rabe, Karin M. ;
Takeuchi, Ichiro .
ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (07) :1108-1115
[7]   Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films [J].
Kawae, T. ;
Terauchi, Y. ;
Tsuda, H. ;
Kumeda, M. ;
Morimoto, A. .
APPLIED PHYSICS LETTERS, 2009, 94 (11)
[8]   Large remanent polarization in ferroelectric BiFeO3-PbTiO3 thin films on Pt/Si substrates [J].
Khan, Mikael A. ;
Comyn, Tim P. ;
Bell, Andrew J. .
APPLIED PHYSICS LETTERS, 2007, 91 (03)
[9]   Dramatically enhanced polarization in (001), (101), and (111) BiFeO3 thin films due to epitiaxial-induced transitions [J].
Li, JF ;
Wang, JL ;
Wuttig, M ;
Ramesh, R ;
Wang, N ;
Ruette, B ;
Pyatakov, AP ;
Zvezdin, AK ;
Viehland, D .
APPLIED PHYSICS LETTERS, 2004, 84 (25) :5261-5263
[10]   Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films [J].
Martin, L. W. ;
Chu, Y-H. ;
Ramesh, R. .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2010, 68 (4-6) :III-133