ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

被引：15

作者：

Hyung, Gun Woo ^{[2
]}

Park, Jaehoon ^{[3
,4
]}

Koo, Ja Ryong ^{[1
]}

Choi, Kyung Min ^{[5
]}

Kwon, Sang Jik ^{[5
]}

Cho, Eou Sik ^{[5
]}

Kim, Yong Seog ^{[2
]}

Kim, Young Kwan ^{[1
]}

机构：

[1] Hongik Univ, Dept Informat Display, Seoul 121791, South Korea

[2] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea

[3] Univ Durham, Sch Engn & Comp Sci, Durham DH1 3LE, England

[4] Univ Durham, Ctr Mol & Nanoscale Elect, Durham DH1 3LE, England

[5] Kyungwon Univ, Dept Elect Engn, Songnam 416701, South Korea

来源：

SOLID-STATE ELECTRONICS | 2012年 / 69卷

关键词：

Zinc oxide; Thin-film transistor; Atomic layer deposition (ALD); Plastic substrate; Polymeric insulator; ZINC-OXIDE; PERFORMANCE; STABILITY; TFTS;

D O I：

10.1016/j.sse.2011.12.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm(2)/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator. (c) 2011 Elsevier Ltd. All rights reserved.

引用

页码：27 / 30

页数：4

共 16 条

[1] Al2O3 buffer in a ZnO thin film transistor with poly-4-vinylphenol dielectric [J].

Bang, Seokhwan ;

Lee, Seungjun ;

Jeon, Sunyeol ;

Kwon, Semyung ;

Jeong, Wooho ;

Kim, Honggyu ;

Shin, Iksup ;

Chang, Ho Jung ;

Park, Hyung-ho ;

Jeon, Hyeongtag .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (02)

[2] High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere [J].

Bashir, Aneeqa ;

Woebkenberg, Paul H. ;

Smith, Jeremy ;

Ball, James M. ;

Adamopoulos, George ;

Bradley, Donal D. C. ;

Anthopoulos, Thomas D. .

ADVANCED MATERIALS, 2009, 21 (21) :2226-+

[3] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[4] A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators [J].

Cross, R. B. M. ;

De Souza, Maria Merlyne ;

Deane, Steve C. ;

Young, Nigel D. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (05) :1109-1115

[5] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[6]

Jin SH, 2004, J KOREAN PHYS SOC, V44, P181

[7] Low-voltage-driven top-gate ZnO thin-film transistors with polymer/high-k oxide double-layer dielectric [J].

Lee, Kimoon ;

Kim, Jae Hoon ;

Im, Seongil ;

Kim, Chang Su ;

Baik, Hong Koo .

APPLIED PHYSICS LETTERS, 2006, 89 (13)

[8] Performance improvement for solution-processed high-mobility ZnO thin-film transistors [J].

Li, Chen Sha ;

Li, Yu Ning ;

Wu, Yi Liang ;

Ong, Beng S. ;

Loutfy, Rafik O. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (12)

[9] Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass [J].

Makino, Hisao ;

Miyake, Aki ;

Yamada, Takahiro ;

Yamamoto, Naoki ;

Yamamoto, Tetsuya .

THIN SOLID FILMS, 2009, 517 (10) :3138-3142

[10] Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering [J].

Navamathavan, R. ;

Choi, Chi Kyu ;

Yang, Eun-Jeong ;

Lim, Jae-Hong ;

Hwang, Dae-Kue ;

Park, Seong-Ju .

SOLID-STATE ELECTRONICS, 2008, 52 (05) :813-816

← 1 2 →