CsBr- InN/GaN Photocathodes Examined with Photoelectron Emission Microscopy

被引：0
作者：
Vaughn, Joel M. [1 ]
Wan, Congshang [1 ]
Kordesch, Martin E. [1 ]
机构：
[1] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
来源：
2011 24TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2011年
关键词：
photocathode; CsBr; InN; GaN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A promising cathode type is the CsBr/GaN photocathode (PC). These cathodes are constructed by depositing a CsBr layer on sputter deposited GaN or InN. The use of InGaN or InN substrates rather than GaN means that the photoelectrons can be excited by visible photons.
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页码：81 / 82
页数：2
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