Ferroelectric PZT thin films on Si and SBN substrates

被引：0
|
作者：
Neurgaonkar, RR
Nelson, JG
Lin, J
Cheng, J
机构：
来源：
MINIATURIZED SYSTEMS WITH MICRO-OPTICS AND MICROMECHANICS II | 1997年 / 3008卷
关键词：
piezoelectric; thin films; PZT; sol-gel; lattice-matched substrates;
D O I：
10.1117/12.271434
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The sol-gel technique has been used to produce perovskite PZT thin films on lattice-matched SBN:60 and LaAlO3 substrates. These films were spin-coated and then annealed in the range of 500 - 700 degrees C in an oxygen atmosphere. Highly grain oriented films showed high polarization and the potential for a large electro-optic response. In all cases, the PZT thin films were highly crystalline, with dielectric constants > 1300. PZT films were also deposited on Pt-metallized Si using the same deposition technique in order to establish the effect of annealing conditions on the formation of pyrochlore phase.
引用
收藏
页码：350 / 358
页数：9
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