Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime

被引：81
作者：
Ellmers, C
Höhnsdorf, F
Koch, J
Agert, C
Leu, S
Karaiskaj, D
Hofmann, M
Stolz, W
Rühle, WW
机构：
[1] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany
[2] Univ Marburg, Wissensch Zentrum Mat Wissensch, D-35032 Marburg, Germany
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期
关键词：
D O I：
10.1063/1.123821
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
(GaIn)(NAs) vertical-cavity surface-emitting lasers for room-temperature emission at 1.3 mu m wavelength are designed and grown by metal-organic vapor-phase epitaxy using dimethylhydrazine and tertiarybutylarsine. Room-temperature operation at wavelengths up to 1.285 mu m is achieved with low optical pumping thresholds between 1.6 and 2.0 kW/cm(2). Stimulated emission dynamics after femtosecond optical pumping are measured and compare favorably with results on (GaIn)As/Ga(PAs)-based structures. (C) 1999 American Institute of Physics. [S0003-6951(99)03416-6].
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页码：2271 / 2273
页数：3
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