InGaN/GaN Vertical Light-Emitting Diodes With Diamondlike Carbon/Titanium Heat-Spreading Layers

被引：7
作者：
Tsai, Pai Yang [1 ]
Huang, Hou Kuei [1 ]
Sung, Chien-Min [2 ]
Kan, Ming Chi [2 ]
Wang, Yeong Her [1 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[2] Ritedia, Dept DLC Technol, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 08期
关键词：
Diamondlike carbon (DLC); gallium nitride (GaN); light-emitting diode (LED); NITRIDE; GAN;
D O I：
10.1109/LED.2013.2266670
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Vertical light-emitting diodes (VLEDs) with diamondlike carbon/titanium (DLC/Ti) heat-spreading layers on silicon (Si) substrates are investigated. Good thermal conductivity coupled with a thermal expansion coefficient similar to that of gallium nitride enables DLC/Ti to enhance heat dissipation via the Si substrate for Si-bonded VLEDs. The relative light intensity of VLEDs with DLC/Ti operating at 1 A is 10% greater than that of VLEDs without DLC/Ti. The output power droop can be further improved. A slight red shift of 0.5 nm occurs when the injection current is increased from 0.7 to 1 A. VLEDs with DLC/Ti also have lower and more uniform surface temperatures than VLEDs without DLC/Ti. The measured thermal resistance of VLEDs with and without DLC/Ti is 0.63 and 1.51 K/W at an injection current of 350 mA, respectively. This observation shows that the proposed DLC/Ti heat-spreading layer facilitates efficient thermal management in VLEDs.
引用
收藏
页码：1029 / 1031
页数：3
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