The Outlook for SiC Vertical JFET Technology

被引：0

作者：

Bhalla, Anup ^{[1
]}

Li, Xueqing ^{[1
]}

Alexandrov, Petre ^{[1
]}

Dries, J. Christopher ^{[1
]}

机构：

[1] United Silicon Carbide Inc, Monmouth Jct, NJ 08852 USA

来源：

2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2013年

关键词：

POWER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excellent Silicon Carbide (SiC) material properties make SiC JFETs extremely attractive for high power density and high frequency power applications, as well as for circuit protection functions. The absence of a gate oxide and internal parasitic devices allows the device to operate especially well at high temperatures. The vertical current flow design of trench JFETs lead to near ideal specific on-resistance when combined with current wafer thinning and laser contact technologies. Device costs are expected to rapidly drop with the maturing of the foundry production model, migration to 6 inch fabrication and the further application of charge-balance technologies. With the availability of integrated drivers, these devices will become much easier to use. Significant packaging improvements will be needed to fully exploit these devices.

引用

页码：40 / 43

页数：4

共 11 条

[1]

[Anonymous], 2013, APPL POWER ELECT CO

[2] Silicon carbide benefits and advantages for power electronics circuits and systems [J].

Elasser, A ;

Chow, TP .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :969-986

[3]

Friedrichs P, 2006, APPL POWER ELECT CO, P1677

[4]

Gobl C., 2009, POWER ELECT EUROPE, P28

[5]

Li Xueqing, 2013, INT C SIL CARB REL M

[6] Extreme temperature 6H-SiC JFET integrated circuit technology [J].

Neudeck, Philip G. ;

Garverick, Steven L. ;

Spry, David J. ;

Chen, Liang-Yu ;

Beheim, Glenn M. ;

Krasowski, Michael J. ;

Mehregany, Mehran .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (10) :2329-2345

[7]

Ott Roland, 2010, Proceedings of the International Exhibition and Conference for Power Electronics, Intelligent Motion, Power Quality. PCIM 2010, P528

[8]

PALMOUR JW, 1994, MATER RES SOC SYMP P, V339, P133, DOI 10.1557/PROC-339-133

[9] High Temperature Unclamped Inductive Switching Mode Evaluation of SiC JFET [J].

Pushpakaran, Bejoy N. ;

Hinojosa, Miguel ;

Bayne, Stephen B. ;

Veliadis, Victor ;

Urciuoli, Damian ;

El-Hinnawy, Nabil ;

Borodulin, Pavel ;

Gupta, Shalini ;

Scozzie, Charles .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (04) :526-528

[10]

Sheridan DC, 2012, PROC INT SYMP POWER, P385, DOI 10.1109/ISPSD.2012.6229102

← 1 2 →