A Monte Carlo simulation model for surface evolution by plasma etching

被引：4

作者：

Chen, Fangfang ^{[1
]}

Zhu, Kaigui ^{[1
]}

Chen, Aqing ^{[1
]}

Huang, Weijie ^{[1
]}

Feng, Lishuang ^{[2
]}

Zhou, Zhen ^{[2
]}

Ge, Guanglu ^{[3
]}

机构：

[1] Beihang Univ, Dept Phys, Beijing 100191, Peoples R China

[2] Beihang Univ, Sch Instrumentat Sci & Optoelect Engn, Beijing 100191, Peoples R China

[3] Natl Ctr Nanosci & Technol, Lab Nanostanderizat, Beijing 100190, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2013年 / 280卷

基金：

中国国家自然科学基金;

关键词：

Plasma etching; Surface morphology; Simulation; Monte Carlo method; GROWTH;

D O I：

10.1016/j.apsusc.2013.04.171

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A Monte Carlo simulation model, i.e. sputtering etch model, was established with Monte Carlo method to simulate plasma etching induced surface morphology evolution. The surface morphology images and fractal exponents were obtained, with alpha = 0.5, beta = 0.27, z = 1.76. Germanium samples were etched in SF6 plasma and the post-etch surface was analyzed in order to compare with the model. The surface morphology images and fractal exponents by simulation describe the experimental results very well. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：655 / 659

页数：5

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