Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-Layer

被引：0

作者：

Li, Shao-Juan ^{[1
]}

He, Xin ^{[1
]}

Han, De-Dong ^{[1
]}

Wang, Yi ^{[1
]}

Sun, Lei ^{[1
]}

Zhang, Sheng-Dong ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年

关键词：

TRANSPARENT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film transistors using reactive sputtering ZnO with metallic zinc target are fabricated in this work. The maximum processing temperature used is 150 degrees C.The performance of TFTs with high/low-resistivity ZnO dual-active-layer grown at different O-2/Ar flow rate ratio (0.75 and 0.8) is investigated. The experiment results show that the surface properties of channel layer play an important role in controlling of the field effect mobility and threshold voltage. The best performance device is obtained with ZnO dual-active-layer, which has the best surface morphology and moderate grain size. The resulting TFT has a field effect mobility of 8.1 cm(2)/V.s, a threshold voltage of 5.6V, an on/off current ratio of more than 10(7) and a subthreshold swing of 0.92 V/dec.

引用

页码：1190 / 1192

页数：3

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