n-type polycrystalline silicon for luminescent porous silicon films

Polycrystalline silicon thin films may be used to prepare luminescent porous silicon for optoelectronic devices. Photoiuminescence properties and in depth structure of porous-Si films obtained from n+ poly-Si are studied as a function of electrochemical etching under illumination. The effect of grain boundaries on the homogeneity of porous-poly-Si films and on the formation of macropores in the substrate were shown using scanning and transmission electron microscopy (SEM and TEM).