Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition

被引：14
|
作者：
Hsieh, TP [1 ]
Chang, HS
Chen, WY
Chang, WH
Hsu, TM
Yeh, NT
Ho, WJ
Chiu, PC
Chyi, JI
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli, Taiwan
[2] Natl Cent Univ, Ctr Opt Sci, Chungli, Taiwan
[3] Natl Cent Univ, Dept Phys, Chungli, Taiwan
[4] Chunghwa Telecom Co Ltd, Telecommun Labs, Yangmei, Taiwan
来源：
NANOTECHNOLOGY | 2006年 / 17卷 / 02期
关键词：
D O I：
10.1088/0957-4484/17/2/028
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the preparation of low density self-assembled InGaAs on GaAs grown by metal-organic chemical vapour deposition for single photon sources. Through using a set of optimized growth parameters, including the arsine partial pressure, total coverage of quantum dots, and growth temperature, high optical quality quantum dots with density as low as 5 x 10(6) cm(-2) have been obtained. Using local optical excitation through a sub-micron aperture of a single quantum dot, its spectral lines associated with the exciton, biexciton, multi-exciton, and charged exciton have been resolved and identified. Photon correlation measurements show that the single quantum dot can successfully emit antibunched photons.
引用
收藏
页码：512 / 515
页数：4
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