Changes in electrical and structural properties of phase-change Ge-Sb-Te films by Zr addition

被引:19
作者
Li, Zengguang [1 ,2 ]
Lu, Yegang [1 ,2 ]
Ma, Yadong [1 ,2 ]
Song, Sannian [3 ]
Shen, Xiang [2 ,4 ]
Wang, Guoxiang [2 ,4 ]
Dai, Shixun [2 ,4 ]
Song, Zhitang [3 ]
机构
[1] Ningbo Univ, Fac Elect Engn & Comp Sci, Ningbo 315211, Zhejiang, Peoples R China
[2] Key Lab Photoelect Mat & Devices Zhejiang Prov, Ningbo 315211, Zhejiang, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[4] Ningbo Univ, Adv Technol Res Inst, Lab Infrared Mat & Devices, Ningbo 315211, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
Phase transformation; Crystallization; Thermal stability; Band gap; PHYSICAL-PROPERTIES; LOCAL-STRUCTURE; TRANSITION;
D O I
10.1016/j.jnoncrysol.2016.08.006
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, the effect of Zr on the phase change properties of Ge2Sb2Te5 (GST) is systemically studied for phase change random access memory. The sheet resistance ratio between amorphous and crystalline states achieves four to five orders of magnitude. The crystalline resistance, crystallization temperature (Tc) and the 10 years data-retention of Zr-GST films increase with the Zr concentration. Zr-GST films are crystallized into a single phase without phase separation due to the Zr bonding with Sb and Te. With the increasing annealing temperature, the transformation from face-centered cubic (fcc) to hexagonal is suppressed when the Zr atomic content is higher than 6%, which is ascribed to the lack formation of the Te-Te pairs. The wide band gap of the amorphous Zr-GST films is favorable to reduce the threshold current The incorporating Zr atoms are embedded in the inner atomic-scale structure of the GST, which contributes to performance improvement of the GST material for phase change random access memory. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:9 / 13
页数:5
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