Numerical simulation of laser-produced plasma devices for EUV lithography using the heights integrated model

被引:35
作者
Sizyuk, V
Hassanein, A
Morozov, V
Tolkach, V
Sizyuk, T
Rice, B
机构
[1] Argonne Natl Lab, Div Energy Technol, Argonne, IL 60439 USA
[2] Intel Corp, Component Res Div, Hillsboro, OR 97124 USA
关键词
D O I
10.1080/10407780500324996
中图分类号
O414.1 [热力学];
学科分类号
摘要
Laser-produced plasma (LPP) devices have been modeled as the light source for extreme ultraviolet (EUV) lithography. A key challenge for LPP is achieving sufficient brightness to support the throughput requirements of high-volume manufacturing. An integrated model ( HEIGHTS) was applied to simulate the environment of EUV sources and optimize their output. The model includes plasma evolution and magnetohydrodynamic processes in a two-temperature approximation, as well as photon radiation transport determined by the Monte Carlo method. It uses the total variation diminishing scheme for the description of magnetic compression and diffusion in a cylindrical 2-D geometry for the target. Generation of the internal magnetic field with nonparallel density and temperature gradients was also considered. Preliminary results from numerical simulation in hydrodynamics and line radiation output of xenon and tin plasmas are presented for planar and droplet targets.
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页码:215 / 236
页数:22
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