The effects of microfibers on electrical characteristics of zinc oxide thin film transistor

被引：4
|
作者：
Alahmed, Zeyad A. [1 ]
Yakuphanoglu, Fahrettin [2 ]
机构：
[1] King Saud Univ, Coll Sci, Dept Phys & Astron, Riyadh 11451, Saudi Arabia
[2] Firat Univ, Fac Sci, Dept Phys, TR-23169 Elazig, Turkey
来源：
MICROELECTRONIC ENGINEERING | 2013年 / 110卷
关键词：
Thin film transistor; Solution process; Field effect mobility; FIELD-EFFECT TRANSISTORS; OPTICAL-PROPERTIES; HIGH-PERFORMANCE; ACTIVE LAYER; ZNO; SEMICONDUCTOR; THICKNESS;
D O I：
10.1016/j.mee.2013.04.023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high mobility n-type thin film transistor based on sol-gel processed zinc oxide (ZnO) was fabricated. The ZnO thin film was prepared by spin coating the precursor solution on a SiO2 dielectric layer. AFM results indicate that the ZnO film is formed from the microfibers. The solution-processed ZnO TFT was found to exhibit a high mobility of 0.47 cm(2)/V.s. This indicates that the microfiber ZnO film has a important effect to fabricate a high mobility ZnO thin film transistor. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：25 / 28
页数：4
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