Real-time monitoring of silicon oxide deposition processes

被引：13

作者：

Gravalidis, C ^{[1
]}

Gioti, M ^{[1
]}

Laskarakis, A ^{[1
]}

Logothetidis, S ^{[1
]}

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, GR-54124 Thessaloniki, Greece

来源：

SURFACE & COATINGS TECHNOLOGY | 2004年 / 180卷

关键词：

in situ; real-time; spectroscopic ellipsometry; optical properties; silicon oxide;

D O I：

10.1016/j.surfcoat.2003.10.141

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Multi-wavelength ellipsometry in Vis-far UV energy range has been applied for the study and the monitoring of the stoichiometry (x) and optical properties of SiOx films, grown on c-Si substrates by electron-beam evaporation technique, using different source materials (SiO2 SiO or SiOx). The ellipsometric data collected in real-time correspond to 32 different wavelengths covering the range from 1.5 up to 6.5 eV, and are fitted by applying the Tauc-Lorentz model. The calculated optical parameters, such as Penn Gap omega(o) and the fundamental band gap omega(g) are directly correlated to x values. In addition, the close monitoring of the deposition processes provides the ability to study the growth mechanisms that are discussed in terms of the source material and the predominant precursors during deposition. Therefore, this methodology reveals the potential for real-time control of SiOx films' growth of desirable stoichiometry or a functionally graded one, meeting specific demands for microelectronics or other industrial applications. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：655 / 658

页数：4

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