A 19.2 mW, > 45 dB Gain and High-Selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS

被引：15

作者：

Bi, Xiaojun ^{[1
,2
]}

Guo, Yongxin ^{[1
]}

Xiong, Yong Zhong ^{[3
]}

Arasu, Muthukumaraswamy Annamalai ^{[2
]}

Je, Minkyu ^{[2
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Singapore A STAR, Inst Microelect, Agcy Sci Technol & Res, Singapore 117685, Singapore

[3] ASTAR, Inst Microelect, Singapore 117685, Singapore

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2013年 / 23卷 / 05期

关键词：

Cascode; low noise amplifier (LNA); q-enhanced; shape-factor (SF); SiGe BiCMOS;

D O I：

10.1109/LMWC.2013.2251620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a high-gain and selectivity W-band LNA using 0.13 mu m SiGe BiCMOS is proposed. A Q-enhanced cascode approach with a filter synthesis passband-forming technique was employed to achieve gain and selectivity improvement simultaneously. The amplifier achieved a gain of above 45 dB and a noise figure of 6-8.3 dB at 77-101 GHz with a power consumption of 19.2 mW. The LNA has high selectivity with a 3 dB-to-35 dB shape factor of 2.1, which is comparable with silicon-based passive millimeter-wave filters.

引用

页码：261 / 263

页数：3

A 19.2 mW, &gt; 45 dB Gain and High-Selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS

A 19.2 mW, > 45 dB Gain and High-Selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS