Development of microcracks in hydrogen-implanted silicon substrates

被引：23

作者：

Penot, Jean-Daniel ^{[1
]}

Massy, Damien ^{[1
]}

Rieutord, Francois ^{[1
]}

Mazen, Frederic ^{[2
]}

Reboh, Shay ^{[2
]}

Madeira, Florence ^{[2
]}

Capello, Luciana ^{[3
]}

Landru, Didier ^{[3
]}

Kononchuk, Oleg ^{[3
]}

机构：

[1] CEA INAC, F-38054 Grenoble 9, France

[2] CEA Leti, F-38054 Grenoble 9, France

[3] Soitec, F-38190 Bernin, France

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 12期

关键词：

EXFOLIATION; MECHANISMS; SI;

D O I：

10.1063/1.4821239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The development of microcracks in hydrogen-implanted silicon has been studied up to the final split using optical microscopy and mass spectroscopy. It is shown that the amount of gas released when splitting the material is proportional to the surface area of microcracks. This observation is interpreted as a signature of a vertical collection of the available gas. The development of microcracks is modeled taking into account both diffusion and mechanical crack propagation. The model reproduces many experimental observations such as the dependence of split time upon temperature and implanted dose. (C) 2013 AIP Publishing LLC.

引用

页数：6

共 18 条

[1] SILICON-ON-INSULATOR MATERIAL TECHNOLOGY [J].