Structural, optical and photoluminescence properties of Pr-doped β-Ga2O3 thin films

被引：45

作者：

Li, Wenhao ^{[1
,2
]}

Peng, Yangke ^{[1
,2
]}

Wang, Chong ^{[3
]}

Zhao, Xiaolong ^{[1
,2
]}

Zhi, Yusong ^{[1
,2
]}

Yan, Hui ^{[1
,2
]}

Li, Linghong ^{[4
]}

Li, Peigang ^{[1
,2
,5
]}

Yang, Hujiang ^{[1
,2
]}

Wu, Zhenping ^{[1
,2
]}

Tang, Weihua ^{[1
,2
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China

[3] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

[4] SUNY Coll Potsdam, Dept Phys, Potsdam, NY 13676 USA

[5] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Zhejiang, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 697卷

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

Ga2O3:Pr; Photoluminescence; Thin film; Doping; LUMINESCENCE; EMISSION; PHOTODETECTOR; LIGHT; RED;

D O I：

10.1016/j.jallcom.2016.12.143

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

((2) over bar 01) oriented Pr-doped beta-Ga2O3 (Ga2O3:Pr) thin films have been grown on (000l) alpha-Al2O3 substrates using radio frequency magnetron sputtering method. The influences of the dopant contents on the structural and optical properties of the Ga2O3: Pr thin films have been systematically studied. With the increase of Pr concentration, the c-axis lattice parameter of beta-Ga2O3 are elongated, with the energy band gap shrinks. The Ga2O3: Pr films show a broad-band blue (similar to 490 nm) and a pronounced red (similar to 615 nm) photoluminescence under 255 nm light illumination. The obtained photoluminescence results are related to the energy transfer of cross relaxation process within the 4f(2) configuration of the Pr3+. This work may provide a prominent candidate for further developing advanced composite materials incorporated with luminescent ions. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：388 / 391

页数：4

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