One monolayer of gold on an Si(111) surface: surface phases and phase transitions

被引:17
作者
Khramtsova, EA [1 ]
Sakai, H
Hayashi, K
Ichimiya, A
机构
[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Inst Automat & Control Proc, Vladivostok, Russia
基金
日本学术振兴会;
关键词
gold; metal-semiconductor interfaces; reflection high-energy electron diffraction (RHEED); scanning tunneling microscopy; silicon; surface relaxation and reconstruction;
D O I
10.1016/S0039-6028(99)00112-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The formation and atomic structure of the surface phases induced by Au coverages of about one monolayer have been studied using RHEED and STM. From the comparison of one-beam RHEED intensity rocking curves and STM images, we have found that the alpha root 3-Au, beta root 3-Au, 2 root 21-Au and 6 x 6-Au surfaces have similar atomic structures, which are different from the structure of high-temperature gamma root 3-Au phase at the same Au coverage. To obtain the atomic structure perpendicular to the surface, the one-beam RHEED intensity rocking curves have been analyzed by RHEED dynamical calculations and thereby the interlayer distances and atomic densities of surface parallel layers have been determined. A possible mechanism of phase transitions and surface ordering is proposed and discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:405 / 409
页数:5
相关论文
共 14 条
[1]   SEGREGATION OF GOLD TO SILICON (111) SURFACE OBSERVED BY AUGER EMISSION SPECTROSCOPY AND BY LEED [J].
BISHOP, HE ;
RIVIERE, JC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1969, 2 (12) :1635-&
[2]   THEORETICAL INVESTIGATION OF THE STRUCTURE OF THE (ROOT-3X-ROOT-3R30-DEGREES-AU/SI(111) SURFACE [J].
DING, YG ;
CHAN, CT ;
HO, KM .
SURFACE SCIENCE, 1992, 275 (03) :L691-L696
[3]   AU/SI(111) - ANALYSIS OF THE (SQUARE-ROOT 3 X SQUARE-ROOT 3)R30-DEGREES AND 6X6 STRUCTURES BY INPLANE X-RAY-DIFFRACTION [J].
DORNISCH, D ;
MORITZ, W ;
SCHULZ, H ;
FEIDENHANSL, R ;
NIELSEN, M ;
GREY, F ;
JOHNSON, RL .
PHYSICAL REVIEW B, 1991, 44 (20) :11221-11230
[4]   DOMAIN-WALL STRUCTURE OF SI(111) (ROOT-3X-ROOT-3) R30-DEGREES-AU [J].
FALTA, J ;
HILLE, A ;
NOVIKOV, D ;
MATERLIK, G ;
SEEHOFER, L ;
FALKENBERG, G ;
JOHNSON, RL .
SURFACE SCIENCE, 1995, 330 (02) :L673-L677
[5]   Comparative study of room- and high-temperature Si(111)-(√3x√3)R30°-Au structures using one-beam RHEED intensity rocking-curve analysis [J].
Khramtsova, EA ;
Ichimiya, A .
PHYSICAL REVIEW B, 1998, 57 (16) :10049-10053
[6]  
Kiiramtsova EA, 1997, JPN J APPL PHYS 2, V36, pL926
[7]   DETERMINATION OF THE SI(111) 1X1 STRUCTURE AT HIGH-TEMPERATURE BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].
KOHMOTO, S ;
ICHIMIYA, A .
SURFACE SCIENCE, 1989, 223 (03) :400-412
[8]  
MARKS LD, IN PRESS SURF REV LE
[9]   Structural phase transitions of Si(111)-(√3x√3)R30°-Au:: Phase transitions in domain-wall configurations [J].
Nagao, T ;
Hasegawa, S ;
Tsuchie, K ;
Ino, S ;
Voges, C ;
Klos, G ;
Pfnur, H ;
Henzler, M .
PHYSICAL REVIEW B, 1998, 57 (16) :10100-10109
[10]  
NOGAMI J, 1990, PHYS REV LETT, V65, P2211, DOI 10.1103/PhysRevLett.65.2211