Manufacture and characterization of nanocomposite thin films of Si-SiO2 and Ag-Si

被引:6
|
作者
Chang, ITH [1 ]
Niu, F [1 ]
Slimovici, D [1 ]
Wildig, C [1 ]
Leigh, PA [1 ]
Dobson, PJ [1 ]
Cantor, B [1 ]
机构
[1] UNIV OXFORD,OXFORD CTR ADV MAT & COMPOSITES,OXFORD OX1 3PH,ENGLAND
关键词
nanocomposite; cosputtering; Si-SiO2; Ag-Si; TEM; XRD; UV-VIS;
D O I
10.4028/www.scientific.net/MSF.225-227.175
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Co-sputtering has been used to manufacture nanocomposite thin films of Si and Ag particles embedded in amorphous SiO2 and Si matrices respectively. A combination of transmission electron microscopy(TEM), Rutherford backscattering spectrometry(RBS), energy dispersive microanalysis (EDS) and UV-VIS spectrophotometry has been used to characterize the microstructures, compositions and optical behaviour of the nanocomposite thin films. In co-sputtered nanocomposite Si-SiO2 and Ag-Si films, the Si and Ag particles are typically 4-20nm in size.
引用
收藏
页码:175 / 178
页数:4
相关论文
共 50 条
  • [1] Manufacture and characterization of nanocomposite thin films of Si-SiO2 and Ag-Si
    Chang, I.T.H.
    Niu, F.
    Slimovici, D.
    Wildig, C.
    Leigh, P.A.
    Dobson, P.J.
    Cantor, B.
    1996, Transtec Publ Ltd., Zurich, Switzerland (225-227)
  • [2] MICROSTRUCTURAL CHARACTERIZATION OF NANOCOMPOSITE THIN-FILMS OF AG-SIO2, AG-ZNO AND AG-SI
    LEE, MH
    CHANG, ITH
    DOBSON, PJ
    CANTOR, B
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1994, 179 : 545 - 551
  • [3] Percolation phenomena in Si-SiO2 nanocomposite films
    Stavarache, I.
    Ciurea, M. L.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2007, 9 (08): : 2644 - 2647
  • [4] Electronic transport in Si-SiO2 nanocomposite films
    Ciurea, M. L.
    Teodorescu, V. S.
    Iancu, V.
    Balberg, I.
    CHEMICAL PHYSICS LETTERS, 2006, 423 (1-3) : 225 - 228
  • [5] Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films
    Rozo, C.
    Fonseca, L. F.
    Jaque, D.
    Sole, J. Garcia
    JOURNAL OF LUMINESCENCE, 2008, 128 (5-6) : 897 - 900
  • [6] Fabrication of Si/SiO2 nanocomposite thin films
    Chang, ITH
    Cantor, B
    Leigh, PA
    Dobson, PJ
    NANOSTRUCTURED MATERIALS, 1995, 6 (5-8): : 835 - 838
  • [7] IMPROVED CHARACTERIZATION OF THE SI-SIO2 INTERFACE
    SU, P
    SHER, A
    TSUO, YH
    MORIARTY, JA
    MILLER, WE
    APPLIED PHYSICS LETTERS, 1980, 36 (12) : 991 - 993
  • [8] Charge transport in Si-SiO2 and Si-TiO2 nanocomposite structures
    Yu. S. Milovanov
    G. V. Kuznetsov
    V. A. Skryshevsky
    S. M. Stupan
    Semiconductors, 2014, 48 : 1335 - 1341
  • [9] SI-SIO2 INTERFACE CHARACTERIZATION BY ESCA
    ISHIZAKA, A
    IWATA, S
    KAMIGAKI, Y
    SURFACE SCIENCE, 1979, 84 (02) : 355 - 374
  • [10] Charge Transport in Si-SiO2 and Si-TiO2 Nanocomposite Structures
    Milovanov, Yu S.
    Kuznetsov, G. V.
    Skryshevsky, V. A.
    Stupan, S. M.
    SEMICONDUCTORS, 2014, 48 (10) : 1335 - 1341