Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films

被引：21

作者：

Nayfeh, Osama M. ^{[1
]}

Birdwell, A. Glen ^{[1
]}

Tan, Cheng ^{[1
]}

Dubey, Madan ^{[1
]}

Gullapalli, Hemtej ^{[2
]}

Liu, Zheng ^{[2
]}

Reddy, Arava Leela Mohana ^{[2
]}

Ajayan, Pulickel M. ^{[2
]}

机构：

[1] USA, Res Lab ARL, SEDD, Adelphi, MD 20783 USA

[2] Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77005 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 10期

关键词：

BORON-NITRIDE; HIGH-QUALITY; SCATTERING; TRANSPORT;

D O I：

10.1063/1.4794533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large-area chemical vapor deposited graphene/boron-nitride (G/BN) thin films are co-transferred layer-by-layer to silicon-di-Oxide (SiO2) substrates, and transistors are constructed and examined. Raman spectra and high resolution transmission electron microscopy imaging show films of high quality. The graphene/boron-nitride/SiO2 devices have a significantly increased peak electron/hole mobility of 3400/2200 cm(2)/Vs with a reduced effective doping density over reference graphene/SiO2 devices. The mobility dependence as a function of carrier density is compared with a physically based empirical model and is in agreement with the improvements due to a consistent reduction in the substrate induced phonon and impurity scattering and an improvement in the overall surface quality owed to the boron-nitride interlayer that separates the graphene from the SiO2. Large-area G/BN thin films are promising for future high performance thin film electronic devices. [http://dx.doi.org/10.1063/1.4794533]

引用

页数：3

共 15 条

[1] Scattering mechanisms and Boltzmann transport in graphene [J].