Influence of reacting gas content on structural and electro-physical properties of nanostructured diamond films grown by chemical vapor deposition with crossed E/H field glow discharge stabilization
被引:2
作者:
Nasieka, Iurii
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机构:
NAS Ukraine, V Ye Lashkaryov Inst Semicond Phys, 45 Pr Nauky, UA-03028 Kiev, UkraineNAS Ukraine, V Ye Lashkaryov Inst Semicond Phys, 45 Pr Nauky, UA-03028 Kiev, Ukraine
Nasieka, Iurii
[1
]
Strelchuk, Victor
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机构:
NAS Ukraine, V Ye Lashkaryov Inst Semicond Phys, 45 Pr Nauky, UA-03028 Kiev, UkraineNAS Ukraine, V Ye Lashkaryov Inst Semicond Phys, 45 Pr Nauky, UA-03028 Kiev, Ukraine
Strelchuk, Victor
[1
]
Stubrov, Yuriy
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机构:
NAS Ukraine, V Ye Lashkaryov Inst Semicond Phys, 45 Pr Nauky, UA-03028 Kiev, UkraineNAS Ukraine, V Ye Lashkaryov Inst Semicond Phys, 45 Pr Nauky, UA-03028 Kiev, Ukraine
Diamond films;
Chemical vapor deposition (CVD);
Atomic force microscopy (AFM);
Scanning electron microscopy (SEM);
Micro -Raman scattering (mu-RS);
Photoluminescence (PL);
RAMAN-SPECTROSCOPY;
ULTRANANOCRYSTALLINE DIAMOND;
CARBON;
NANODIAMOND;
SPECTRA;
NUCLEATION;
CENTERS;
D O I:
10.1016/j.tsf.2016.08.038
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The method and setup for polycrystalline diamond films deposition from the gas-phase using the direct current (DC) glow discharge stabilized by crossed E/H field are presented. The mentioned method was used for the preparation of nanostructured diamond films. The nanostructure formation was realized by N-2 addition to Ar/CH4/H-2 plasma. The detailed study of electro-physical, morphological and structural properties was done using simple two-electrodes scheme of resistivity measurements, atomic force and scanning electron microscopies as well as Raman spectroscopy. The data of electro-physical measurements is in good correlation with the data of optical measurements and complement each other showing the complete picture of the processes of modification of the diamond films structure induced by nitrogen atoms incorporation. (C) 2016 Elsevier B.V. All rights reserved.
机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
Chu, PK
Li, LH
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机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
Chu, PK
Li, LH
论文数: 0引用数: 0
h-index: 0
机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China