Nanomaterials in transistors: From high-performance to thin-film applications

被引:535
作者
Franklin, Aaron D. [1 ,2 ]
机构
[1] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
[2] Duke Univ, Dept Chem, Durham, NC 27708 USA
关键词
FIELD-EFFECT TRANSISTORS; WALLED CARBON NANOTUBES; ATOMIC LAYER DEPOSITION; LARGE-AREA; 2-DIMENSIONAL MATERIALS; TRANSPORT-PROPERTIES; CONTACT RESISTANCE; MOS2; TRANSISTORS; CURRENT RATIO; HIGH-YIELD;
D O I
10.1126/science.aab2750
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices.
引用
收藏
页数:10
相关论文
共 108 条
[1]  
[Anonymous], 1965, Electronics
[2]   Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design [J].
Appenzeller, J ;
Lin, YM ;
Knoch, J ;
Chen, ZH ;
Avouris, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) :2568-2576
[3]   Sorting carbon nanotubes by electronic structure using density differentiation [J].
Arnold, Michael S. ;
Green, Alexander A. ;
Hulvat, James F. ;
Stupp, Samuel I. ;
Hersam, Mark C. .
NATURE NANOTECHNOLOGY, 2006, 1 (01) :60-65
[4]   Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's [J].
Auth, CP ;
Plummer, JD .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (02) :74-76
[5]   Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors [J].
Avsar, Ahmet ;
Vera-Marun, Ivan J. ;
Tan, Jun You ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Castro Neto, Antonio H. ;
Oezyilmaz, Barbaros .
ACS NANO, 2015, 9 (04) :4138-4145
[6]   MoS2 functionalization for ultra-thin atomic layer deposited dielectrics [J].
Azcatl, Angelica ;
McDonnell, Stephen ;
Santosh, K. C. ;
Peng, Xin ;
Dong, Hong ;
Qin, Xiaoye ;
Addou, Rafik ;
Mordi, Greg I. ;
Lu, Ning ;
Kim, Jiyoung ;
Kim, Moon J. ;
Cho, Kyeongjae ;
Wallace, Robert M. .
APPLIED PHYSICS LETTERS, 2014, 104 (11)
[7]   Elemental Analogues of Graphene: Silicene, Germanene, Stanene, and Phosphorene [J].
Balendhran, Sivacarendran ;
Walia, Sumeet ;
Nili, Hussein ;
Sriram, Sharath ;
Bhaskaran, Madhu .
SMALL, 2015, 11 (06) :640-652
[8]  
Bangsaruntip S, 2009, INT EL DEVICES MEET, P272
[9]   Polyfluorene-Sorted, Carbon Nanotube Array Field-Effect Transistors with Increased Current Density and High On/Off Ratio [J].
Brady, Gerald J. ;
Joo, Yongho ;
Wu, Meng-Yin ;
Shea, Matthew J. ;
Gopalan, Padma ;
Arnold, Michael S. .
ACS NANO, 2014, 8 (11) :11614-11621
[10]   Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene [J].
Butler, Sheneve Z. ;
Hollen, Shawna M. ;
Cao, Linyou ;
Cui, Yi ;
Gupta, Jay A. ;
Gutierrez, Humberto R. ;
Heinz, Tony F. ;
Hong, Seung Sae ;
Huang, Jiaxing ;
Ismach, Ariel F. ;
Johnston-Halperin, Ezekiel ;
Kuno, Masaru ;
Plashnitsa, Vladimir V. ;
Robinson, Richard D. ;
Ruoff, Rodney S. ;
Salahuddin, Sayeef ;
Shan, Jie ;
Shi, Li ;
Spencer, Michael G. ;
Terrones, Mauricio ;
Windl, Wolfgang ;
Goldberger, Joshua E. .
ACS NANO, 2013, 7 (04) :2898-2926