Simulation of gate switching characteristics of a miniaturized MOSFET based on a non-isothermal non-equilibrium transport model

被引：0

作者：

Choi, WC

Kawashima, H

Dang, R

机构：

来源：

PROCEEDINGS OF THE ASP-DAC '97 - ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE 1997 | 1996年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Our device simulator is developed for the analysis of a MOSFET based on Thermally Coupled Energy Transport Model(TCETM). The simulator has the ability to calculate not only steady-state characteristics but also transient characteristics of a MOSFET. It solves basic semiconductor devices equations including Poisson equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using finite difference method.

引用

页码：345 / 348

页数：4