An effective method to minimize the leakage current in organic thin-film transistors by using blends of various molecular weights

被引：17

作者：

Kim, Hyeok ^{[1
,3
]}

Bae, Jin-Hyuk ^{[2
]}

Lee, Sin-Doo ^{[3
]}

Horowitz, Gilles ^{[1
]}

机构：

[1] Univ Paris 07, ITODYS, CNRS, F-75205 Paris, France

[2] Kyungpook Natl Univ, Coll IT Engn, Sch Elect Engn, Taegu 702701, South Korea

[3] Seoul Natl Univ, Sch Elect Engn 32, Seoul 151600, South Korea

来源：

ORGANIC ELECTRONICS | 2012年 / 13卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

Organic thin-film transistor; Molecular weight; Leakage current; Binary mixture; FIELD-EFFECT TRANSISTORS; GATE DIELECTRICS; INTEGRATED-CIRCUITS; CONJUGATED POLYMERS; INSULATOR; MOBILITY; ELECTRONICS; DENSITY;

D O I：

10.1016/j.orgel.2012.03.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on an effective method to minimize the leakage current in an organic thin-film transistor (OTFT) by using a polymeric gate insulator, poly(vinyl phenol) (PVP). When the molecular weight (M-w) of the PVP varies, only the leakage current is affected under constant remaining electrical parameters. More importantly, through a binary mixing between two different M-w, it is found that the leakage current can be minimized. This is attributed to a reduction of the free volume in the blended PVP layer, leading to a more vigorous cross-linking reaction, as compared to a single molecular weight PVP. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1255 / 1260

页数：6

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