An effective method to minimize the leakage current in organic thin-film transistors by using blends of various molecular weights

被引：17
作者：
Kim, Hyeok [1 ,3 ]
Bae, Jin-Hyuk [2 ]
Lee, Sin-Doo [3 ]
Horowitz, Gilles [1 ]
机构：
[1] Univ Paris 07, ITODYS, CNRS, F-75205 Paris, France
[2] Kyungpook Natl Univ, Coll IT Engn, Sch Elect Engn, Taegu 702701, South Korea
[3] Seoul Natl Univ, Sch Elect Engn 32, Seoul 151600, South Korea
来源：
ORGANIC ELECTRONICS | 2012年 / 13卷 / 07期
基金：
新加坡国家研究基金会;
关键词：
Organic thin-film transistor; Molecular weight; Leakage current; Binary mixture; FIELD-EFFECT TRANSISTORS; GATE DIELECTRICS; INTEGRATED-CIRCUITS; CONJUGATED POLYMERS; INSULATOR; MOBILITY; ELECTRONICS; DENSITY;
D O I：
10.1016/j.orgel.2012.03.030
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on an effective method to minimize the leakage current in an organic thin-film transistor (OTFT) by using a polymeric gate insulator, poly(vinyl phenol) (PVP). When the molecular weight (M-w) of the PVP varies, only the leakage current is affected under constant remaining electrical parameters. More importantly, through a binary mixing between two different M-w, it is found that the leakage current can be minimized. This is attributed to a reduction of the free volume in the blended PVP layer, leading to a more vigorous cross-linking reaction, as compared to a single molecular weight PVP. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：1255 / 1260
页数：6
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