Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors

被引：11

作者：

Lo, Chien-Fong ^{[1
]}

Liu, Lu ^{[1
]}

Ren, Fan ^{[1
]}

Pearton, Stephen J. ^{[2
]}

Gila, Brent P. ^{[2
]}

Kim, Hong-Yeol ^{[3
]}

Kim, Jihyun ^{[3
]}

Laboutin, Oleg ^{[4
]}

Cao, Yu ^{[4
]}

Johnson, Jerry W. ^{[4
]}

Kravchenko, Ivan I. ^{[5
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea

[4] Kopin Corp, Taunton, MA 02780 USA

[5] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37830 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 04期

关键词：

FIELD-EFFECT TRANSISTORS; ALGAN/GAN; PERFORMANCE; HEMTS; DEVICES; GAN;

D O I：

10.1116/1.4729285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 5 x 10(15) cm(-2) with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with similar to 10% degradation of the unity gain cut-off frequency (f(T)) and maximum oscillation frequency (f(max)) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66-1.24 cm(-1) over the range of proton energies investigated. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4729285]

引用

页数：6

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