High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

被引：103

作者：

Nayak, Pradipta K.

Hedhili, M. N. ^{[1
]}

Cha, Dongkyu ^{[1
]}

Alshareef, H. N. ^{[1
]}

机构：

[1] King Abdullah Univ Sci & Technol KAUST, Imaging & Characterizat Lab, Thuwal 239556900, Saudi Arabia

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 20期

关键词：

LOW-TEMPERATURE;

D O I：

10.1063/1.4718022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with high performance were fabricated using O-2-plasma treatment of the films prior to high temperature annealing. The O-2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O-2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O-2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718022]

引用

页数：4

共 26 条

[21] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].