Investigation on growth mechanisms of columnar structured YSZ coatings in Plasma Spray-Physical Vapor Deposition (PS-PVD)

被引:51
作者
He, Wenting [1 ]
Mauer, Georg [1 ]
Sohn, Yoo Jung [1 ]
Schwedt, Alexander [2 ]
Guillon, Olivier [1 ,3 ]
Vassen, Robert [1 ]
机构
[1] Forschungszentrum Julich, IEK 1, Julich, Germany
[2] Rhein Westfal TH Aachen, Gemeinschaftslab Elektronenmilcroskopie, Aachen, Germany
[3] Julich Aachen Res Alliance JARA Energy, Julich, Germany
关键词
PS-PVD; YSZ TBCs; Equiaxed growth; Preferential growth; Columnar microstructure; THERMAL BARRIER COATINGS; STABILIZED ZIRCONIA COATINGS; MICROSTRUCTURAL EVOLUTION; BIAXIAL ALIGNMENT; TEXTURE EVOLUTION; CERAMIC COATINGS; LAYERS; CONDUCTIVITY; ORIENTATION; TEMPERATURE;
D O I
10.1016/j.jeurceramsoc.2019.04.003
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
By Plasma Spray-Physical Vapor Deposition (PS-PVD), major fractions of the powder feedstock can be evaporated so that the coating builds up mainly from vapor phase. In this work, the deposition mechanisms at different PS-PVD conditions were investigated. Depending on the plasma flow conditions and the substrate temperature, the columns in the coatings possess successively pyramidal, cauliflower, and lamellar shaped tops. In addition, the different microstructures show characteristic crystallographic textures, in which different in-plane and out-of-plane orientations were observed by pole figures. Based on investigations by electron back-scatter diffraction (EBSD), the overall coating growth process can be roughly divided into three subsequent stages: equiaxed growth, competitive growth, and preferential growth. Influences of diffusion and shadowing on final coating microstructure and orientation were discussed. The formation of equiaxed grains was proposed to be caused by high nucleation rates, which are probably induced by large undercooling and super-saturation at the beginning of deposition. The preferential growth orientation was preliminarily explained based on an evolutionary selection mechanism.
引用
收藏
页码:3129 / 3138
页数:10
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