High spatial resolution graded-gap AlxGa1-xAs X-ray detector

被引：14

作者：

Silenas, Aldis ^{[1
]}

Pozela, Juras ^{[1
]}

Pozela, Karolis ^{[1
]}

Dapkus, Leonas ^{[1
]}

Juciene, Vida ^{[1
]}

机构：

[1] Lithuania Acad Sci, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2006年 / 563卷 / 01期

关键词：

X-ray detectors; graded-gap AlxGa1-xAs structures;

D O I：

10.1016/j.nima.2006.01.059

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Spatial resolution of two types of graded-gap AlxGa1-xAs X-ray detectors, p(+)-AlxGa1-xAs layer (A type) and lp-AlxGa1-xAs-p(+)-GaAs-p-AlxGa1-xAs structure (B-type), is investigated. Two processes, the diffusion of generated charge and broadening of light beam, cause blurring of X-ray image in the detectors. Optical broadening of light beam was eliminated in B-type structure. The value of spatial resolution mainly depends on the thickness of graded-gap AlxGa1-xAs layer. Spatial resolution of 10 LP/mm for the A-type structure of 50 mu m thickness and 25 LP/mm for B-type structure of 18 mu m thickness was experimentally observed. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：21 / 23

页数：3

共 5 条

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