A complete absorption mechanism of stacking fault tetrahedron by screw dislocation in copper

被引：11

作者：

Fan, Haidong

Wang, Qingyuan ^{[1
]}

机构：

[1] Sichuan Univ, Dept Sci & Eng Mech, Chengdu 610065, Peoples R China

来源：

JOURNAL OF NUCLEAR MATERIALS | 2013年 / 441卷 / 1-3期

关键词：

MOLECULAR-DYNAMICS SIMULATION; DESTRUCTION;

D O I：

10.1016/j.jnucmat.2013.05.058

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It was frequently observed in experiments that stacking fault tetrahedron (SFT) can be completely absorbed by dislocation and generate defect-free channels in irradiated materials, but the mechanism is still open. In this paper, molecular dynamics (MD) was used to explore the dislocation mechanism of reaction between SFT and screw dislocation in copper. Our computational results reveal that, at high temperature, the SFT is completely absorbed by screw dislocation with the help of Lomer-Cottrell (LC) lock transforming into Lomer dislocation. This complete absorption mechanism is very helpful to understand the defect-free channels in irradiated materials. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：211 / 215

页数：5