Topological phase transitions and quantum Hall effect in the graphene family

被引:18
|
作者
Ledwith, P. [1 ,2 ,3 ]
Kort-Kamp, W. J. M. [2 ,3 ]
Dalvit, D. A. R. [3 ]
机构
[1] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[2] Los Alamos Natl Lab, Ctr Nonlinear Studies, MS B258, Los Alamos, NM 87545 USA
[3] Los Alamos Natl Lab, Theoret Div, MS B213, Los Alamos, NM 87545 USA
关键词
ELECTRONIC-PROPERTIES; STANENE; FIELD;
D O I
10.1103/PhysRevB.97.165426
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers and static electric or magnetic fields. We show how topological features arising from photoinduced phase transitions and the magnetic-field-induced quantum Hall effect coexist in these materials and simultaneously impact their Hall conductivity through their corresponding charge Chern numbers. We also show that the spectral response of the longitudinal conductivity contains signatures of the various phase-transition boundaries, that the transverse conductivity encodes information about the topology of the band structure, and that both present resonant peaks which can be unequivocally associated with one of the four inequivalent Dirac cones present in these materials. This complex optoelectronic response can be probed with straightforward Faraday rotation experiments, allowing the study of the crossroads between quantum Hall physics, spintronics, and valleytronics.
引用
收藏
页数:8
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